Capacitance-Voltage Characterization of LPCVD-Silicon Oxynitride Films

Abstract Nanoprobing is one of the key characterization techniques for soft defect localization in SRAM. DC transistor performance metrics could be used to identify the root cause of the fail mode. One such case report where nanoprobing was applied to a wafer impacted by significant SRAM yield loss is presented in this paper where standard FIB cross-section on hard fail sites and top down delayered inspection did not reveal any obvious defects. The authors performed nanoprobing DC characterization measurements followed by capacitance-voltage (CV) measurements. Two probe CV measurement was then performed between the gate and drain of the device with source and bulk floating. The authors identified valuable process marginality at the gate to lightly doped drain overlap region. Physical characterization on an inline split wafer identified residual deposits on the BL contacts potentially blocking the implant. Enhanced cleans for resist removal was implemented as a fix for the fail mode.

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dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0255 ◽

2013 ◽

Author(s):

Sweta Pendyala ◽

Dave Albert ◽

Katherine Hawkins ◽

Michael Tenney

Keyword(s):

Deep Submicron ◽

Work Flow ◽

Localization Technique ◽

Characterization Techniques ◽

Capacitance Voltage ◽

Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

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Electrical characterization of silicon dioxide and silicon oxynitride thin films

10.31979/etd.dunk-3588 ◽

2006 ◽

Author(s):

April Tai

Keyword(s):

Thin Films ◽

Silicon Dioxide ◽

Electrical Characterization ◽

Silicon Oxynitride

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ChemInform Abstract: Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition.

ChemInform ◽

10.1002/chin.199406262 ◽

2010 ◽

Vol 25 (6) ◽

pp. no-no

Author(s):

X.-L. XU ◽

P. K. MCLARTY ◽

H. BRUSH ◽

V. MISRA ◽

J. J. WORTMAN ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Oxynitride ◽

Thermal Chemical Vapor Deposition ◽

Abstract Characterization ◽

Thin Silicon

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The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.891 ◽

2011 ◽

Vol 239-242 ◽

pp. 891-894 ◽

Cited By ~ 3

Author(s):

Tsung Fu Chien ◽

Jen Hwan Tsai ◽

Kai Huang Chen ◽

Chien Min Cheng ◽

Chia Lin Wu

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Morphological Characterization ◽

Experimental Result ◽

X Ray Diffraction ◽

Solution Deposition ◽

Capacitance Voltage ◽

Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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